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Growing Graphene on Semiconductors

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書名

Growing Graphene on Semiconductors
著者・編者 Motta, N. et al.-
出版社/発行元 Psychology Press
発行年/月 2017年9月28日  
装丁 Hardcover
ページ数/巻数 300 ページ
ISBN 978-981-4774-21-5
発送予定 出版後 海外倉庫よりお取り寄せ2-3週間以内に発送します

 

Desciption

 

Graphene, the wonder material of the 21st century, is expected to play an important role in future nanoelectronic applications, but the only way to achieve this goal is to grow graphene directly on a semiconductor, integrating it in the chain for the production of electronic circuits and devices.

This book summarizes the latest achievements in this field, with particular attention to the graphitization of SiC. Through high-temperature annealing in a controlled environment, it is possible to decompose the topmost SiC layers, obtaining quasi-ideal graphene by Si sublimation with record electronic mobilities, while selective growth on patterned structures makes possible the opening of a gap by quantum confinement.

The book starts with a review chapter on the significance and challenges of graphene growth on semiconductors, followed by three chapters dedicated to an up-to-date analysis of the synthesis of graphene in ultrahigh vacuum, and concludes with two chapters discussing possible ways of tailoring the electronic band structure of epitaxial graphene by atomic intercalation and of creating a gap by the growth of templated graphene nanostructures.

 

Contents:

 

Foreword
The significance and challenges of direct growth of graphene on semiconductor surfaces
Graphene synthesized on cubic-SiC(001) in ultra-high vacuum: Atomic and electronic structure, transport properties
Epitaxial Graphene from UHV decomposition of 3C-SiC/Si
Diffusion and kinetics in epitaxial graphene growth on SiC
Atomic intercalation at the SiC/graphene interface
Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons

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