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商品コード: 9789813109407

Gallium Nitride and Silicon Carbide Power Devices

販売価格(税込): 16,016 円  (本体価格: 14,830 円+税)
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書名

Gallium Nitride and Silicon Carbide Power Devices
著者・編者 Baliga, B.J.
出版社/発行元 World Scientific
発行年/月 2017年2月   
装丁 Hardcover
ページ数/巻数 592 ページ
ISBN 978-981-3109-40-7
発送予定 海外倉庫よりお取り寄せ 2-3週間以内に発送します

 

Desciption

 

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.

This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

 

Contents:

 

Preface
Introduction
Material Properties
Breakdown Voltage
Ideal Specific On-Resistance
Schottky Rectifiers
Shielded Schottky Rectifiers
P-i-N Rectifiers
MPS Rectifiers
Junction Field Effect Transistors
The Baliga-Pair (Cascode) Configuration
SiC Planar Power MOSFETs
SiC Trench-Gate Power MOSFETs
GaN Vertical Power HFETs
GaN Lateral Power HFETs
SiC Bipolar Junction Transistors
SiC Gate Turn-Off Thyristors
SiC IGBTs
Synopsys
Homework Problems

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